PART |
Description |
Maker |
WM72016-6-DGTR |
16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access
|
Cypress Semiconductor
|
HD68A44 HD6844 HD68B44 |
Direct Memory Access Controller
|
Hitachi Semiconductor
|
UM6264 UM6264M-10 UM6264M-10L UM6264-12 UM6264-10 |
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Memory Configuration:64K x 8; Memory Size:32MB; NOR Flash Type:Page Mode Access 8K x 8 CMOS SRAM
|
United Microelectronics Corporation ETC UMC[UMC Corporation]
|
K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
IDT70825S_L |
HIGH SPEED 128K (8K X 16 BIT) SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?)
|
IDT
|
MCM6810 MCM6810CP MCM6810CS MCM6810P MCM6810S |
1 MHz; V(cc/in): -0.3 to 7.0V; 450ns; 128 x 8-bit randon-access memory 128 8-bit Random-Access Memory
|
MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
82C37 HS-82C37RH |
CMOS High Performance Programmable DMA Controller Direct Memory Access Controller, CMOS, 2.5MBPS, 50A, Rad-Hard DMA Controller, Programmable, CMOS, 5, 8, and 12.5MHz
|
Intersil
|
MB85R256PFTN MB85R256PF MB85R256 |
Memory FRAM(Ferroelectric Random Access Memory)
|
Fuji Electric Fujitsu Component Limited.
|
SI3016-F-FS |
3.3 V ENHANCED GLOBAL DIRECT ACCESS ARRANGEMENT SPECIALTY CONSUMER CIRCUIT, PDSO16
|
Silicon Laboratories, Inc.
|
HM514400B HM514400BL HM514400C HM514400CL HM514400 |
1,048,576-word x 4-bit dynamic random access memory, 80ns 1,048,576-word x 4-bit dynamic random access memory, 60ns 1/048/576-word X 4-bit Dynamic Random Access Memory 1,048,576-word x 4-bit dynamic random access memory, 70ns
|
Hitachi Semiconductor
|
S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56 2M X 16 FLASH 3V PROM, 100 ns, PBGA56 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc. SPANSION LLC
|